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IXKH 35N60C5
COOLMOS ? * Power MOSFET
N-Channel Enhancement Mode
Low R DSon , High V DSS MOSFET
Ultra low gate charge
G
D
I D25 = 35 A
V DSS = 600 V
R DS(on) max = 0.1 Ω
TO-247 AD
G
S
D
S
D(TAB)
MOSFET
Features
Symbol
V DSS
Conditions
T VJ = 25°C
Maximum Ratings
600 V
? fast COOLMOS ? * power MOSFET
4 th generation
- High blocking capability
V GS
± 20
V
- Lowest resistance
I D25
I D90
T C = 25°C
T C = 90°C
35
25
A
A
- Avalanche rated for unclamped
inductive switching (UIS)
- Low thermal resistance
E AS
E AR
single pulse
repetitive
I D = 11 A; T C = 25°C
800
1.2
mJ
mJ
due to reduced chip thickness
? Enhanced total power density
dV/dt
MOSFET dV/dt ruggedness V DS = 0...480 V
50
V/ns
Applications
Symbol
Conditions
Characteristic Values
(T VJ = 25 ° C, unless otherwise speci?ed)
? Switched mode power supplies
(SMPS)
? Uninterruptible power supplies (UPS)
min.
typ.
max.
? Power factor correction (PFC)
? Welding
R DSon
V GS = 10 V; I D = 18 A
90
100
m Ω
? Inductive heating
V GS(th)
I DSS
I GSS
V DS = V GS ; I D = 1.2 mA
V DS = 600 V; V GS = 0 V
V GS = ± 20 V; V DS = 0 V
T VJ = 25°C
T VJ = 125°C
2.5
3
50
3.5
5
100
V
μA
μA
nA
? PDP and LCD adapter
*COOLMOS ? is a trademark of
In?neon Technologies AG.
C iss
C oss
V GS = 0 V; V DS = 100 V
f = 1 MHz
2800
130
pF
pF
Q g
60
80
nC
Q gs
Q gd
t d(on)
t r
t d(off)
t f
R thJC
V GS = 0 to 10 V; V DS = 400 V; I D = 18 A
V GS = 10 V; V DS = 400 V
I D = 18 A; R G = 3.3 Ω
14
20
10
5
60
5
0.35
nC
nC
ns
ns
ns
ns
K/W
IXYS reserves the right to change limits, test conditions and dimensions.
? 2009 IXYS All rights reserved
20090209c
1-4
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